*for surface mount application *metal-semiconductor junction with guardring *epitaxial construction *low forward voltage drop *high current capability *plastic meterial has ul flammability classification 94v-0 *for use in low , and polarity protection applications *case : molded plastic *device marking:d1030ct-d1045ct *weight : 0.011 ounce ,0.295 grams r e v e r s e v o l t a g e 3 0 t o 4 5 v o l t s f o r w a r d c u r r e n t 1 0 a m p e r e unit:mm weitron http://www.weitron.com.tw d-pak outline dimension wsd1030ct th r u wsd1045ct d-pak d - p a k ( t o - 2 5 2 ) dim a b c d e g h j k l m min 6.40 9.00 0.50 - 2.20 0.45 1.00 5.40 0.30 0.70 0.90 max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 d-pak d-pak / to-252 a b c d e g h l m j k 1 2 3 4 1 2 3 (case) 1/3 rev.a 13-may-05
rating 25 c ambient t emperature unless otherwise specified. single phase half w ave, 60hz , resistive or inductive load. for capacitive load, derate current by 20%. vrrm vrms vdc ifsm vf ir tj, t st g 30 21 30 0.5 5.0 http://www .weitron.com.tw characteristic symbol unit weitron wsd1030ct thru wsd1045ct wsd10 30ct 35ct 40ct 45ct 35 25 35 40 28 40 45 32 45 5.0 10 f(a v ) i 125 0.55 c =25 c -65 t o 125 r v 2/3 rev.a 13-may-05
w e i t r o n weitron http://www .weitron.com.tw wsd1030ct thru wsd1045ct a verage fordw ard rectified (amp) fig.1 forward curr ent case tempera ture ( c) 0 25 50 75 100 125 150 4 2 0 6 8 10 inst ant aneous for w ard v ol t age (v olts) inst ant aneous for w ard current (amp) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 5 10 50 percent of ra ted peak reverse v ol t age (%) inst ant aneous reverse current (ma) 0 20 40 60 80 100 120 140 0.01 0.1 20 10 1 reverse v ol t age (v olts) junction cap acit ance (pf) 1000 100 1 10 5 40 500 2000 number of cycles a t 60hz peak for w ard surge current (amp) 1 10 100 0 25 50 75 100 125 150 fig.2 t ypical forward characteristics fig.3 t ypical reverse characteristics fig.4 t ypical junction capacitance fig.5 peak forward surge curr ent derating curve 3/3 rev.a 13-may-05
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